pin configuration (top view) mitsubishi semiconductor m54583p/fp 8-unit 400ma darlington transistor array description m54583p and M54583FP are eight-circuit collector-current- synchronized darlington transistor arrays. the circuits are made of pnp and npn transistors. both the semiconductor integrated circuits perform high-current driving with ex- tremely low input-current supply. features high breakdown voltage (bv ceo 50v) high-current driving (ic(max) = 400ma) active l-level input with input clamping diodes application interfaces between microcomputers and high-voltage, high- current drive systems, drives of relays and printers, and mos-bipolar logic ic interfaces function the m54583 is produced by adding pnp transistors to m54523 inputs. eight circuits having active l-level inputs are provided. resistance of 7k ? and diode are provided in series between each input and pnp transistor base. the input diode is in- tended to prevent the flow of current from the input to the v cc . without this diode, the current flow from ??input to the v cc and the ??input circuits is activated, in such case where one of the inputs of the 8 circuits is ??and the others are ? to save power consumption. the diode is inserted to prevent such misoperation. this device is most suitable for a driver using nmos ic out- put especially for the driver of current sink. collector current is 400ma maximum. collector-emitter sup- ply voltage is 50v. the 54583fp is enclosed in a molded small flat package, enabling space saving design. circuit diagram (each circuit) 1 in1 input output in2 in3 in4 in5 in6 in7 v cc v cc o8 in8 gnd 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 o7 o6 o5 o4 o3 o2 o1 outline 18p4g m54583p M54583FP 1 nc input output nc : no connection in1 in2 in3 in4 in5 in6 o8 in7 in8 2 3 4 5 6 7 8 9 20 19 18 17 16 15 14 13 12 gnd 10 11 o7 o6 o5 o4 o2 o3 o1 nc outline 20p2n-a 7k 2.7k 7k 7.2k 3k input gnd v cc output the eight circuits share the v cc and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : ? may 2007
may 2007 2 ton 50% 50% 50% 50% toff input output pg 50 ? c l r l v cc v o input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 s, tr = 6ns, tf = 6ns, z o = 50 ? v i = 0.4 to 4v (2) input-output conditions : r l = 30 ? , v o = 10v, v cc = 4v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device mitsubishi semiconductor m54583p/fp 8-unit 400ma darlington transistor array timing diagram note 1 test circuit 10 ?.5 ~ +50 ?.5 ~ v cc 400 1.79/1.1 ?0 ~ +75 ?5 ~ +125 v v v ma w c c absolute maximum ratings (unless otherwise noted, ta = ?0 ~ +75 c) ratings unit symbol parameter conditions supply voltage collector-emitter voltage input voltage collector current power dissipation operating temperature storage temperature output, h current per circuit output, l ta = 25 c, when mounted on board v cc v ceo v i i c p d t opr t stg ns ns t on t off 130 3200 symbol unit parameter test conditions limits min typ max switching characteristics (unless otherwise noted, ta = 25 c) c l = 15pf (note 1) t urn-on time t urn-off time v v v 8 v cc v cc ?.6 5 4 v cc ?.7 0 v cc v ih v il collector current per channel recommended operating conditions (unless otherwise noted, ta = ?0 ~ +75 c) i c 0 0 ma 350 200 parameter limits symbol unit supply voltage min typ max ??input voltage ??input voltage v cc = 5v, duty cycle p : no more than 34% fp : no more than 15% v cc = 5v, duty cycle p : no more than 10% fp : no more than 5% v a ma v (br) ceo i i i cc h fe v v ce (sat) 2.2 1.6 ?00 3 i ceo = 100 a, v cc = 8v v i = v cc ?.6v v cc = 5v, v i = v cc ?.6v v ce = 4v, v cc = 5v, i c = 350ma, ta = 25 c symbol unit parameter test conditions limits min typ + max 50 2000 1.2 0.98 ?20 1.9 3500 + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. collector-emitter breakdown voltage input current supply current (one circuit coming on) dc amplification factor collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = ?0 ~ +75 c) i c = 350ma i c = 200ma v i = v cc ?.6v
may 2007 3 mitsubishi semiconductor m54583p/fp 8-unit 400ma darlington transistor array typical characteristics thermal derating factor characteristics ambient temperature ta ( c) power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) collector current ic (ma) ta = ?0 c ta = 25 c ta = 75 c v i = 1.4v v cc = 5v ta = ?0 c ta = 25 c ta = 75 c 0 100 200 300 400 500 0 2.0 0.5 1.0 1.5 m54583p M54583FP duty cycle (%) 1 2 3 4 collector current ic (ma) duty-cycle-collector characteristics (m54583p) 0 100 200 300 400 500 020406 080 100 6 5 7 8 duty cycle (%) 1 2 3 4 collector current ic (ma) duty-cycle-collector characteristics (M54583FP) 0 100 200 300 400 500 020406 080 100 6 5 7 8 duty cycle (%) 1 2 3 4 collector current ic (ma) duty-cycle-collector characteristics (m54583p) 0 100 200 300 400 500 020406 080 100 6 5 7 8 ?he collector current values represent the current per circuit. ?epeated frequency 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. duty cycle (%) 1 2 3 4 collector current ic (ma) duty-cycle-collector characteristics (M54583FP) 0 100 200 300 400 500 020406 080 100 6 5 7 8 ?cc =5.0v ?a = 75 c ?he collector current values represent the current per circuit. ?epeated frequency 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 25 c ?he collector current values represent the current per circuit. ?epeated frequency 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 75 c ?he collector current values represent the current per circuit. ?epeated frequency 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 25 c
may 2007 4 mitsubishi semiconductor m54583p/fp 8-unit 400ma darlington transistor array dc amplification factor collector current characteristics collector current ic (ma) dc amplification factor h fe supply current icc (ma) 0 100 200 300 400 0 supply voltage v cc (v) supply current characteristics collector current ic (ma) supply voltage-input voltage v cc v i (v) grounded emitter transfer characteristics ta = ?0 c ta = 25 c ta = 75 c v i = 0v ta = ?0 c ta = 25 c ta = 75 c 0 1 2 3 4 5 0246810 input characteristics supply voltage-input voltage v cc v i (v) input current i i (ma) ta = ?0 c ta = 25 c ta = 75 c v cc = 5v ta = ?0 c ta = 25 c ta = 75 c 0 ?.2 ?.4 ?.6 ?.8 ?.0 012345 01234 v cc = 4v v ce = 4v ta = ?0 c ta = 25 c ta = 75 c 10 1 10 2 357 10 3 357 10 2 10 3 3 5 7 10 4 3 5 7 ta = ?0 c ta = 25 c ta = 75 c v cc = 5v v ce = 4v ta = ?0 c ta = 25 c ta = 75 c
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